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Related papers: Atomic Layer Deposition of SiO$_2$-GeO$_2$ multila…

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In this paper, Second-order NLO properties of ZnO and AZO thin films from experimental results are discussed. Measurements were a single wavelength of 1.064 micrometers using the standard rotational Maker fringes technique in a transmission…

Applied Physics · Physics 2023-04-28 Calford Odhiambo Otieno

Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into…

Heterostructures increasingly attracted attention over the past several years to enable various optoelectronic and photonic applications. In this work, atomically thin interfaces of Ir/Al2O3 heterostructures compatible with…

We demonstrate the extensive study on how film density and crystallinity of molybdenum carbide ($MoC_{x}$) can be tailored during plasma-enhanced ALD (PEALD) by controlling either the plasma exposure time or the ion energy. We investigated…

Applied Physics · Physics 2019-11-13 Eldad Grady , Marcel Verheijen , Tahsin Faraz , Saurabh Karwal , W. M. M. Kessels , Ageeth A. Bol

Due to their high kinetic inductance, highly disordered superconducting thin films are a potential hardware for the realization of compact, low-noise elements in cryoelectronic applications. However, high disorder typically results in…

Superconductivity · Physics 2026-02-12 J. Lorenz , S. Linzen , M. Ziegler , G. Oelsner , R. Stolz , F. S. Tautz , F. Lüpke , E. Il'ichev

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…

Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…

The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BN using…

Materials Science · Physics 2015-10-14 N. Takahashi , K. Watanabe , T. Taniguchi , K. Nagashio

Mg-Ti alloys have uncommon optical and hydrogen absorbing properties, originating from a "spinodal-like" microstructure with a small degree of chemical short-range order in the atoms distribution. In the present study we artificially…

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of…

We report the atomic layer deposition of titanium dioxide on carbon nanosheet templates and investigate the effects of post-deposition annealing in a helium environment using different characterization techniques. The crystallization of the…

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…

Materials Science · Physics 2022-07-05 Yogesh Kumar , Prince Sharma , V. P. S. Awana

Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also…

We investigate domain formation and local morphology of thin films of $\alpha$-sexithiophene ($\alpha$-6T) on Au(100) beyond monolayer coverage by combining high resolution scanning tunneling microscopy (STM) experiments with electronic…

Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO…

We have used a scanning tunneling microscope to demonstrate that a single CuO_2 plane can form a stable and atomically ordered layer at the surface of Bi_2Sr_2CaCu_2O_{8+delta}. In contrast to previous studies on high-T_c surfaces, the…

Superconductivity · Physics 2009-11-07 S. Misra , S. Oh , D. J. Hornbaker , T. DiLuccio , J. N. Eckstein , A. Yazdani

A process of atomic layer deposition combined with self assembled monolayers was used to investigate the possible modification of polyurethane paint surfaces. First, we used an ALD process to produce thin and uniform Al2O3 coatings of these…

Applied Physics · Physics 2020-08-05 Daniel Beitner , Iryna Polishchuk , Eric Asoline , Boaz Pokroy

Dewetting of a binary alloy thin film is studied using a continuum many-parameter model that accounts for the surface and bulk diffusion, the bulk phase separation, the surface segregation and the particles formation. Analytical solution is…

Materials Science · Physics 2018-01-19 Mikhail Khenner

The effects of substrate treatment, temperature and composition on the surface morphology of Ni-Cr thin films grown on MgO(001) are studied by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). A combination of…

Materials Science · Physics 2016-12-21 Gopalakrishnan Ramalingam , Petra Reinke

As integrated circuits continue to scale down, the search for new metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO$_2$ is one of the candidate materials…

Materials Science · Physics 2025-05-21 Takayuki Harada , Zuin Ping Lily Ang , Yuki Sakakibara , Takuro Nagai , Yasushi Masahiro