As integrated circuits continue to scale down, the search for new metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial for interconnect applications, has not yet been reported. In this study, we succeeded in the scalable growth of c-axis oriented PdCoO2 thin films via reactive sputtering from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO2 in semiconductor devices.
@article{arxiv.2505.14094,
title = {Scalable alloy-based sputtering of high-conductivity PdCoO$_2$ for advanced interconnects},
author = {Takayuki Harada and Zuin Ping Lily Ang and Yuki Sakakibara and Takuro Nagai and Yasushi Masahiro},
journal= {arXiv preprint arXiv:2505.14094},
year = {2025}
}
Comments
The following article has been accepted by Applied Physics Letters