Related papers: Complementary lateral-spin-orbit building blocks f…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…
Conventional logic and memory devices are built out of deterministic units such as transistors, or magnets with energy barriers in excess of 40-60 kT. We show that stochastic units, p-bits, can be interconnected to create robust…
Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…
In this work, we report implementation and performance evaluation of memristor-driven fundamental logic gates, including NOT, AND, NAND, OR, NOR, and XOR, and novel and optimized design of the sequential logic circuits, such as D flip-flop,…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…
We propose a new, low-complexity solution to realize multi-input-bit gates acting on exponentially large superpositions in noise-based logic processors. Two examples are shown, the NOT gate and the CNOT gate. The operations can be executed…
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their…
Magnetic skyrmions, which are topological particle-like excitations in ferromagnets, have attracted a lot of attention recently. Skyrmionics is an attempt to use magnetic skyrmions as information carriers in next generation spintronic…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…
Spin waves and their quanta magnons open up a promising branch of high-speed and low-power information processing. Several important milestones were achieved recently in the realization of separate magnonic data processing units including…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices.…
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but…
Spin wave, the precession of magnetic order in magnetic materials, is a collective excitation that carries spin angular momentum. Similar to the acoustic or optical waves, the spin wave also possesses the polarization degree of freedom.…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…