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Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
We examine spin dependent transport in a quantum interferometer composed of magnetic atomic sites based on transfer matrix formalism. The interferometer, threaded by a magnetic flux $\phi$, is symmetrically attached to two semi-infinite…
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
We propose the utilization of isotropic forward volume magneto-static spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical…
Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
The three-spin-$1/2$ decoherence-free subsystem defines a logical qubit protected from collective noise and supports exchange-only universal gates. Such logical qubits are well-suited for implementation with electrically-defined quantum…
We propose and develop a concept of magnonic logic gates enabling reversible computing. The gates consist of passive elements: waveguides, cross-junctions and phase shifters. Logical 0 and 1 are encoded in the relative phase of the…
The spin-dependent localization of electrons in quadruple quantum dots (QD's) has been studied by the configuration interaction method. We have investigated two nanodevices that consist of laterally coupled quadruple QD's. We have shown…
In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…
The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information…
We present a systematic approach to implementation of basic quantum logic gates operating on polar molecules in pendular states as qubits for a quantum computer. A static electric field prevents quenching of the dipole moments by rotation,…
Learning and logic are fundamental brain functions that make the individual to adapt to the environment, and such functions are established in human brain by modulating ionic fluxes in synapses. Nanoscale ionic/electronic devices with…
The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Nanomechanical computers promise robust, low energy information processing. However, to date, electronics have generally been required to interconnect gates, while no scalable, purely nanomechanical approach to computing has been achieved.…
Active quantum error correction has been identified as a crucial ingredient of future quantum computers, motivating the recent experimental efforts to encode logical quantum bits using small topological codes. In addition to the…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…