Related papers: Unexpected band gap increase in the Fe2VAl Heusler…
We investigate the electronic structure of CaFe$_2$As$_2$ using high resolution photoemission spectroscopy. Experimental results exhibit three energy bands crossing the Fermi level making hole pockets around the $\Gamma$-point. Temperature…
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…
Thermal conductivity, point contact spectroscopy, angle-resolved photoemission and Raman spectroscopy measurements were performed on BaFe1.9Pt0.1As2 single crystals obtained from the same synthesis batch in order to investigate the…
Two-dimensional superconductors and electron-hole superfluids in van der Waals heterostructures having tunable valence and conduction bands in the electronic spectrum are emerging as rich platforms to investigate novel quantum phases and…
Deviation from perfect conical dispersion in Dirac materials, such as the presence of mass or tilting, enhances control and directionality of electronic transport. To identify these signatures, we analyze the thermal derivative spectra of…
The discovery of Heusler alloys has revolutionized the research field of intermetallics due to the ease with which one can derive potential candidates for multifunctional applications. During recent years, many half Heusler alloys have been…
Fractal metamaterial superconductor geometry has been suggested and analyzed based on the recently developed theoretical description of critical temperature increase in epsilon near zero (ENZ) metamaterial superconductors. Considerable…
The low energy band structure near the band gap determines the electrical performance of thermoelectric materials. Here, by using the hybrid-density functional theory (hybrid-DFT) calculations, we calculate the low energy band structure of…
By using ab initio electronic structure calculations here we report the three new full Heusler alloys which are possessing very good thermoelectric behavior and expected to be synthesized in the laboratories. These are Fe2 ScP, Fe2 ScAs and…
Motivated by the successful synthesis of isolated ZrS2 and HfS2 transition metal dichalcogenide (TMD) monolayers and inspired by their nearly identical lattice constants, we construct and investigate a vertical ZrS2/HfS2 van der Waals (vdW)…
Using Landau level spectroscopy, we determine the temperature dependence of the energy band gap in zirconium pentatelluride (ZrTe$_5$). We find that the band gap reaches $E_g=(5 \pm 1)$ meV at low temperatures and increases monotonously…
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
In the present work, we report the experimental thermopower ($\alpha$) data for ZnV$_{2}$O$_{4}$ compound in the high temperature range 300-600 K. The value of $\alpha$ is found to be $\sim$184 and $\sim$126 $\mu$V/K at $\sim$300 and…
Point contact spectroscopy reveals a gap-like feature above the magnetic and structural transition temperatures for underdoped $Ba(Fe_{1-x}Co_x)_2As_2$, $SrFe_2As_2$ and $Fe_{1+y}Te$. The conductance spectrum starts showing an enhancement…
We performed Boltzmann transport calculation to obtain the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and thermoelectric figure of merit (ZT) for Dirac systems. We found an enhancement of ZT due to the…
First principle calculations based on LDA/GGA approximation for the exchange functional underestimate the position of the semi core 3d levels in GaX (X = N, P and As) semiconductors. A self-interaction correction scheme within the…
We determined the complex dielectric functions of $\varepsilon$-Ga$_2$O$_3$ using optical transmittance and reflectance spectroscopies at temperatures from 10 K to room temperature. The measured dielectric-function spectra reveal distinct…
Using a high-resolution differential technique we have determined the electronic specific heat coefficient gamma(T) of Ba1-xKxFe2As2 with x=0 to 1.0, at temperatures (T) from 2K to 380K and in magnetic fields H=0 to 13T. In the normal state…
At low temperature T, the experimental gap of silicon decreases as E_g(T)=E_g(0)-AT^4. The main reason is electron-phonon renormalization. The physics behind the T^4-power law is more complex than has been realized. Renormalization by…
The in-plane optical conductivity of UPd_2Al_3 was measured at temperatures $2 {\rm K}<T<300$ K in the spectral range from 1 cm^{-1} to 40 cm^{-1} (0.14 meV to 5 meV). As the temperature decreases below 25 K a well pronounced pseudogap of…