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Calculations of the optical properties of GeTe in the cubic NaCl and rhombohedral ferroelectric structures are reported. The rhombohedral ferroelectric distortion increases the band gap from 0.11 eV to 0.38 eV. Remarkably, substantial…

Materials Science · Physics 2013-05-24 David J. Singh

We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. We find that the upper Hubbard band moves towards the Fermi energy with increasing…

Strongly Correlated Electrons · Physics 2021-12-28 Li Haiwei , Ye Shusen , Zhao Jianfa , Jin Changqing , Yayu Wang

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key…

For materials of varying band gap, we compare energy levels of atomically localized defects calculated within a semilocal and a hybrid density-functional scheme. Since the latter scheme partially relieves the band gap problem, our study…

Materials Science · Physics 2008-07-30 Audrius Alkauskas , Peter Broqvist , Alfredo Pasquarello

Intermetallic narrow-gap semiconductors have been intensively explored due to their large thermoelectric power at low temperatures and a possible role of strong electronic correlations in their unusual thermodynamic and transport…

The presence of nonmagnetic impurities in a 2D ``bad metal'' depresses the superconducting Berezinskii-Kosterlitz-Thouless transition temperature, while leaving the pairing energy scale unchanged. Thus the region of the pseudogap…

Superconductivity · Physics 2009-10-31 Vadim M. Loktev , Rachel M. Quick , Sergei G. Sharapov

Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission…

Materials Science · Physics 2009-11-13 V. Novak , K. Olejnik , M. Cukr , L. Smrcka , Z. Remes , J. Oswald

We present a microscopic picture rationalizing the surprisingly steep decrease of the band gap with temperature in insulators, crystalline or otherwise. The gap narrowing largely results from fluctuations of long-wavelength optical…

Materials Science · Physics 2019-07-24 Vassiliy Lubchenko , Arkady Kurnosov

We report a high-pressure study of simultaneous low-temperature electrical resistivity and Hall effect measurements on high quality single-crystalline KFe2As2 using designer diamond anvil cell techniques with applied pressures up to 33 GPa.…

Bandgap engineering of low-dimensional materials forms a robust basis for advancements in optoelectronic technologies. Platinum diselenide (PtSe2) material exhibits a transition from semi-metal to semiconductor (SM-SC) when going from bulk…

Materials Science · Physics 2024-07-08 Rania Amairi , Adlen Smiri , Sihem Jaziri

The properties of kagome metals are governed by the interdependence of band topology and electronic correlations resulting in remarkably rich phase diagrams. Here, we study the temperature evolution of the bulk electronic structure of the…

Strongly Correlated Electrons · Physics 2024-07-15 M. Wenzel , E. Uykur , A. A. Tsirlin , S. Pal , R. Mathew Roy , C. Yi , C. Shekhar , C. Felser , A. V. Pronin , M. Dressel

We apply the generalized two-band model of superconductivity to calculate the electronic contribution to the specific heat, superconducting gaps and electron-boson coupling constants of the multi-band layered superconductors MgB2 and…

Superconductivity · Physics 2011-07-26 E. G. Maksimov , A. E. Karakozov , B. P. Gorshunov , E. S. Zhukova , Ya. G. Ponomarev , M. Dressel

Polycrystalline HfPd2Al has been synthesized using the arc-melting method and studied under ambient pressure conditions by x-ray diffraction from room temperature up to 450^oC. High pressure x-ray diffraction up to 23 GPa was also performed…

Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck…

Materials Science · Physics 2021-07-14 Junsoo Park , Max Dylla , Yi Xia , Max Wood , G. Jeffrey Snyder , Anubhav Jain

In van der Waals materials, coupling between adjacent layers is weak, and consequently interlayer interactions are weakly screened. This opens the possibility to profoundly modify the electronic structure, e.g., by applying electric fields…

This study demonstrates the direct correlation between the presence of the L2$_1$ ordered phase and the large enhancement in the thermoelectric performance of Fe$_2$VAl thin films deposited on MgO and Al$_2$O$_3$ substrates at temperatures…

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

The electronic structure of WTe$_2$ and orthorhombic $\gamma-$MoTe$_2$, are claimed to contain pairs of Weyl type-II points. A series of ARPES experiments claim a broad agreement with these predictions. We synthesized single-crystals of…

Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is…

This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.

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