Related papers: 28nm Fully-Depleted SOI Technology: Cryogenic Cont…

Current control techniques for cryogenically cooled qubits are realized with coaxial cables, posing multiple challenges in terms of cost, thermal load, size, and long-term scalability. Emerging approaches to tackle this issue include…

A quasi-optical (QO) test bench was designed, simulated, and calibrated for characterizing S-parameters of devices in the 220-330 GHz (WR-3.4) frequency range, from room temperature down to 4.8 K. The devices were measured through vacuum…

Inspired by recent interest in quantum computing and recent studies of cryo CMOS for control electronics, this paper presents a hybrid semiconductor-superconductor approach for engineering scalable computing systems that operate across the…

This paper presents a novel approach utilizing a scalable neural decoder application-specific integrated circuit (ASIC) based on metal oxide memristors in a 180nm CMOS technology. The ASIC architecture employs in-memory computing with…

Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…

We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and…

Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has…

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…

In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…

In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and…

While nonclassical light sources are fundamental to quantum communication and computing, solid-state platforms like color centers and quantum dots require cryogenic temperatures to reach the performance levels necessary for practical…

Advances in cryogenic electron microscopy have opened new avenues for probing quantum phenomena in correlated materials. This study reports the installation and performance of a new side-entry condenZero cryogenic cooling system for JEOL…

We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, the…

Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using…

This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special…

This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage…