This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not require any large passive components, allowing a very compact design, low loss and high isolation performance. The cryogenic measurements at 2 K show an insertion loss lower than 2.3 dB, an isolation better than 25.3 dB, and the return loss better than -11.5 dB, over the entire frequency range from DC to 70 GHz.
@article{arxiv.2406.12105,
title = {Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors},
author = {T. D. Nhut and S. Bonen and G. Cooke and T. Jager and M. Spasaro and D. Sufra and S. P. Voinigescu and D. Zito},
journal= {arXiv preprint arXiv:2406.12105},
year = {2024}
}
Comments
The final version of this draft has been appearing in the Proceedings of IMS 2022 available on IEEE Xplore Digital Library (10.1109/IMS37962.2022.9865577)