Related papers: Low-frequency noise parameter extraction method fo…
We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The non-linear response to the ac signal is computed through Floquet theory for scattering states…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article…
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…
We calculate low-frequency noise (LFN) in a quantum point contact (QPC) which is electrostatically defined in a 2D electron gas of a GaAs-AlGaAs heterostructure. The conventional source of LFN in such systems are scattering potentials…
Capturing different intensity and directions of light rays at the same scene Light field (LF) can encode the 3D scene cues into a 4D LF image which has a wide range of applications (i.e. post-capture refocusing and depth sensing). LF image…
Low-frequency 1/f noise is ubiquitous, and dominates the signal-to-noise performance in nanodevices. Here we investigate the noise characteristics of single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f noise…
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of…
In the domain of computer vision, multi-scale feature extraction is vital for tasks such as salient object detection. However, achieving this capability in lightweight networks remains challenging due to the trade-off between efficiency and…
We propose a novel transformer-style architecture called Global-Local Filter Network (GLFNet) for medical image segmentation and demonstrate its state-of-the-art performance. We replace the self-attention mechanism with a combination of…
Noise in low-dose computed tomography (LDCT) can obscure important diagnostic details. While deep learning offers powerful denoising, supervised methods require impractical paired data, and self-supervised alternatives often use opaque,…
Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR)…
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…
High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Graphene micro ribbons (GMRs) of various widths and IDE design…
Here, we present a detailed study on low bias current-voltage (I-V) characteristic of graphene superlattice (GSL) resonant tunneling diode (RTD) with heterostructured substrate and series of grounded metallic planes placed over graphene…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and…
We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing…
We report a detailed investigation of low-frequency resistance fluctuations (1/f noise) in chemical vapor deposition (CVD) grown graphene. Systematic measurements reveal that the magnitude of 1/f noise in CVD-grown graphene is significantly…