Related papers: Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN G…
We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with…
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface…
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with…
Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this…
Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an…
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD) techniques. Amorphous H-Si/Ge…
We investigated and demonstrated a 1.3 $\mu$m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded In$_x$Ga$_{1-x}$As buffer and epitaxial structure on a GaAs substrate. Bottom…
Flux growth of single crystals is normally performed in a vertical configuration with an upright refractory container holding the flux melt. At high temperatures, flux dissolves the charge forming a homogeneous solution before nucleation…
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG)…
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal…
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the…
We report about metalorganic vapour phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of V/III ratio, growth temperature, growth rate, as well as sapphire-nitridation time and…
Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
We grew (Hg,Re)Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ ((Hg,Re)1223) single crystals with good reproducibility via the single-step flux method using monoxides as raw materials. A double-sealing method using a thick-walled quartz tube and a…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC…
Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of…
The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and…
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC…