Related papers: SiC Cantilevers For Generating Uniaxial Stress
Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550…
In view of the integration of membrane resonators with more complex MEMS structures, we developed a general fabrication procedure for circular shape SiN$_x$ membranes using Deep Reactive Ion Etching (DRIE). Large area and high-stress…
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting…
Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-mechanical resonators and photonics on-a-chip. For shaping 3D…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
A High-Q microwave (K band) MEMS resonator is presented, which empolys substrate integrated waveguide (SIW) and micromachined via-hole arrays by ICP process. Nonradiation dielectric waveguide (NRD) is formed by metal filled via-hole arrays…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Experiments have been conducted in the DIII-D tokamak to explore the in-situ growth of silicon-rich layers as a potential technique for real-time replenishment of surface coatings on plasma-facing components (PFCs) during steady-state…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…
Superconducting integrated circuit (SIC) is a promising "beyond-CMOS" device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
Controlling the strain in two-dimensional materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical…
We have demonstrated, for the first time to our knowledge, self-injection locking of a distributed feedback (DFB) diode laser to a multimode 4H-silicon carbide (4H-SiC) microring resonator, and observed resonant opto-mechanical oscillation…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized…
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation shifts, the samples were exposed to increasing fluences…
Research on silicon nitride (SiN) nanomechanical resonators produces an exceptionally rich variety of resonator geometries, for which there is currently no available rapid prototyping solution. Experimental advances in nanobeam, trampoline,…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
This report presents a robust composite resonator known as the high overtone bulk acoustic wave resonator (HBAR) for demonstrating experimentally the ability of the resonator to tune the envelope of the spectrum by applying dc bias. The…