Related papers: SiC Cantilevers For Generating Uniaxial Stress
Van der Waals materials are offering intriguing opportunities as building blocks for advanced quantum information technologies and integrated quantum photonic systems. Critical to their development, is robust and high quality light-matter…
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device…
Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot…
The development of new detectors based on Silicon Carbide (SiC) is currently a topic of interest within the scientific community. The significant features of SiC make it highly promising for detecting charged particles, neutrons, and…
By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A…
Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many…
Suspended aluminium nanoelectromechanical resonators have been fabricated, and the manufacturing process is described in this work. Device motion is driven and detected with a magnetomotive method. The resonance response has been measured…
We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this…
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this…
Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were experimentally investigated. Resonance frequencies of the…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate…
Within the framework of the LHC Injector Upgrade (LIU), the new LINAC4 is currently being commissioned to replace the existing LINAC2 proton source at CERN. After the expected completion at the end of 2016, the LINAC4 will accelerate H-…
We report disk-shaped silicon optomechanical resonators with frequency up to 1.75 GHz in the ultrahigh frequency band. Optical transduction of the thermal motion of the disks' in-plane vibrational modes yields a displacement sensitivity of…
We report on a simple method to fabricate high-frequency nanotube mechanical resonators reproducibly. We measure resonance frequencies as high as 4.2 GHz for the fundamental eigenmode and 11 GHz for higher order eigenmodes. The…
Optical pulse shaping stands as a formidable technique in ultrafast optics, radio-frequency photonics, and quantum communications. While existing systems rely on bulk optics or integrated platforms with planar waveguide sections for spatial…
In this study, we evaluate the suitability of using DC-biased aluminium resonators as low-frequency kinetic inductance detectors operating in the frequency range of 50 - 120 GHz. Our analysis routine for supercurrent-biased resonators is…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
We present nanofabrication and mechanical measurements of single-crystal diamond cantilevers with thickness down to 85 nm, thickness uniformity better than 20 nm, and lateral dimensions up to 240 um. Quality factors exceeding one million…