Related papers: SiC Cantilevers For Generating Uniaxial Stress
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified…
High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C >2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz…
Basic SiC bipolar transistors have been studied in the past for their applications where high power or high temperature operation is required. However since the current gain in SiC bipolar transistors is very low and therefore, a large base…
Nowadays microfabrication techniques originating from micro-electronics enable to create mechanical objects of micron-size. The field of Micro-Electro-Mechanical devices (MEMS) is continuously expanding, with an amazingly broad range of…
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (kt2) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide…
We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity…
Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, high-performance computing, and sensing applications. However, the…
Silicon carbide is widely used in electronics, ceramics, and renewable energy due to its exceptional hardness and resistance. In this study, we investigate the effects of hydrostatic and uniaxial pressure (both compressive and tensile) on…
Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in…
High-power and highly directional semiconductor cylinder-lasers based on an optical resonator with deformed cross section are reported. In the favorable directions of the far-field, a power increase of up to three orders of magnitude over…
A room temperature heavy ion linac has been proposed as a new injector of CSRm (the main Cooler Storage Ring) at HIRFL (Heavy Ion Research Facility in Lanzhou), which is expected to improve the performance of HIRFL. The linac injector can…
On-chip optical resonators have the promise of revolutionizing numerous fields including metrology and sensing; however, their optical losses have always lagged behind their larger discrete resonator counterparts based on crystalline…
We present an initial test of a new type of a pre-bunched beam pumped free electron maser based on Stimulated Coherent Diffraction Radiation (SCDR) generated in an open resonator. An ultra-fast Schottky Barrier Diode (time response…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…