Related papers: Erbium location into AlN films as probed by spatia…
Experimentally obtained X-ray diffraction (XRD) patterns can be difficult to solve, precluding the full characterization of materials, pharmaceuticals, and geological compounds. Herein, we propose a method based upon a multi-objective…
Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides…
Transition-metal nitrides in {\eta}-carbide type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries…
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to…
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…
Understanding the mechanisms underlying a stable polarization at the surface of ferroelectric thin films is of particular importance both from a fundamental point of view and to achieve control of the surface polarization itself. In this…
The challenge of imaging low-density objects in an electron microscope without causing beam damage is significant in modern TEM. This is especially true for life science imaging, where the sample, rather than the instrument, still…
The surface area of electrodeposited thin films of Ni, Co, and NiCo was evaluated using electrochemical double-layer capacitance, electrochemical area measurements using the [Ru(NH$_3$)$_6$]$^{3+}$/[Ru(NH$_3$)$_6$]$^{2+}$ redox couple, and…
Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in…
Recent angle-resolved photoemission spectroscopy (ARPES) experiments on La$_{2.85}$Pr$_{0.15}$Ni$_2$O$_7$ thin films have revealed a superconducting gap near the diagonal direction for the $d_{x^2-y^2}$ orbital, confined to a narrow…
Magnetic anisotropy in disordered rare-earth-transition metals (RE-TM) compounds arises from RE atoms occupying asymmetric environments within the TM lattice. However, the underlying mechanism that promotes such environments remains not…
Atomic layer deposition (ALD) provides uniform and conformal thin films that are of interest for a range of applications. To better understand the properties of amorphous ALD films, we need improved understanding of their local atomic…
The development of X-ray free-electron lasers (XFELs) has enabled ultrafast X-ray diffraction (XRD) experiments, which are capable of resolving electronic/vibrational transitions and structural changes in molecules, or capturing molecular…
Thermoelectricity in telluride materials is often improved by replacing telluride with selenium in its crystal. Most work, however, focuses on bulk crystal and leaves the 2D thin films intact. In this paper, we optimize the fabrication of…
Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we…
Ultrathin plasmonic films that approach the trans-dimensional (TD) thickness limit provide a promising route for light_matter interaction control and manipulation, yet their nonlinear optical response near the epsilon_near_zero (ENZ)…
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high…
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…
Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss…
Defect induced magnetism is reported in undoped aluminium nitride thin films deposited using reactive ion beam sputtering of aluminium in nitrogen plasma. The films have been deposited on silicon substrate at different temperatures.…