Related papers: Erbium location into AlN films as probed by spatia…
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…
Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the effect of the Al mole fraction x from 0 to 0.56 on the…
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane…
The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic…
This work describes a methodology for producing high quality metallic surfaces from uranium primarily for characterisation and investigations involving electron backscatter diffraction. Electrochemical measurements have been conducted to…
We use a near-field magnetic microwave microscope to investigate and compare rf vortex nucleation in two superconducting radio-frequency (SRF)-quality Nb3Sn films fabricated by different methods: a conventional vapor-diffused film and an…
Ti/Al multilayer thin films with precise thickness have been deposited using a combination of dc and rf magnetron sputtering techniques. Cross-sectional transmission electron microscopy (TEM) revealed unmixed fifteen parallel and alternate…
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with…
We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped…
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical…
Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication…
We use photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations to identify and explain the properties of carbon in AlN. We present clear evidence for carbon substitution on the nitrogen site (C$_{\rm N}$).…
In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 {\deg}C…
Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be…
We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar…
Metal nitrides possess exceptional catalytic, electronic and physical properties making them widely used in (opto-)electronics and as hard coatings. When used as films in surface-active applications, however, their performance remains…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction…
Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of…
Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray…