Related papers: Erbium location into AlN films as probed by spatia…
Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists…
Erbium-doped \ch{TiO2} materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor their properties and enhance coherence times. This…
Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films…
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss…
The ability to image electromagnetic fields holds key scientific and industrial applications, including electromagnetic compatibility, diagnostics of high-frequency devices, and experimental scientific work involving field interactions.…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…
The present study reports on the structure formation in thin epitaxial nickel-aluminum films (Ni1-xAlx; Al atomic fraction x up to x=0.24) grown on MgO(001) substrates by magnetron sputtering. Experimental and computational data demonstrate…
We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated from both sides with graphene windows. The ultra-thin window liquid cells produced have…
NiFe$_2$O$_4$ thin films with varying thickness were grown on SrTiO$_3$(001) by reactive molecular beam epitaxy. Soft and hard x-ray photoelectron spectroscopy measurements reveal a homogeneous cation distribution throughout the whole film…
Uranium tellurides span magnetic and superconducting ground states, yet systematic electronic-structure information across the U-Te series remains scarce. In this study, we perform photoemission measurements on freshly prepared UxTey thin…
Thin layers of orthorhombic uranium ({\alpha}-U) have been grown onto buffered sapphire substrates by d.c. magnetron sputtering, resulting in the discovery of new epitaxial matches to Ti(00.1) and Zr(00.1) surfaces. These systems have been…
This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging…
Aluminum and their alloys, after careful treatments, can develop excellent mechanical, tribological, electrical and chemical (high corrosion resistance) properties. However, 7000 series, with Cu in the alloy, have a poor corrosion…
Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies…
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were…
Atomic resolution imaging in transmission electron microscopy (TEM) and scanning TEM (STEM) of light elements in electron-transparent materials has long been a challenge. Biomolecular materials, for example, are rapidly altered when…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
Atomic resolution imaging is key to understanding thin film growth and how a particular set of conditions influences properties. Whilst such imaging in the scanning transmission electron microscope (STEM) has had transformative impact in…