Related papers: Erbium location into AlN films as probed by spatia…
Thin film metallic glasses undergoing devitrification can form partially crystallized or fully crystallized materials with novel structural and magnetic properties. The development of desired and tunable properties of such systems drives…
Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band mapping and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same…
The availability of large-area substrates imposes an important constraint on the technological and commercial realization of devices made of layered materials. Aluminum nitride films on silicon are shown to be promising candidate materials…
We present an undergraduate lab that investigates weak localization in thin silver films. The films prepared in our lab have thickness, $a$, between 60-200 \AA, a mesoscopic length scale. At low temperatures, the inelastic dephasing length…
We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen…
Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of…
The synthesis of aluminum substituted strontium hexaferrite nanoparticles (SrFe12-xAlxO19 with x = 0-3), via three different preparation methods, is investigated. The synthesis methods are hydrothermal autoclave (AC) synthesis, a citrate…
We present the first successful trapping of single erbium atoms in an array of optical tweezers. Using a single narrow-line optical transition, we achieve deep cooling for direct tweezer loading, pairwise ejection, and continous imaging…
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scaling. Further reduction in thickness is essential for…
Nitride-based superconductors represent a family of superconducting thin film materials displaying higher quality than their corresponding bare superconductor when used in devices for applications such as cosmic radiation sensing. In recent…
Understanding the luminescence of GaN doped with erbium (Er) requires a detailed knowledge of the interaction between the rare-earth dopant and the nitride host, including intrinsic defects and other impurities that may be present in the…
X-ray absorption near-edge and grazing incidence X-ray fluorescence spectroscopy are employed to investigate the electronic structure of ZnFe$_{2}$O$_{4}$ thin films. The spectroscopy techniques are used to determine the non-equilibrium…
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm)…
Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, device dielectric failure before ferroelectric switching…
We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the…
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a…
Growth of $>$100 $\mu$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers.…
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for…
Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…
The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM),…