Related papers: Erbium location into AlN films as probed by spatia…
We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial…
Energy dispersive X-ray fluorescence (EDXRF) is a widely used non-destructive technique for micro and trace multi-element analysis of materials. Conventional trials show that using laboratory assisted EDXRF measurements, one can obtain…
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been…
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A…
Polycrystalline thin films of $\mathrm{Nb}_{1-x}\mathrm{U}_{x}$ solid solutions with $0.15\leq x \leq 0.40$ were prepared via d.c. magnetron sputtering at ambient conditions. X-ray characterisation of the samples revealed a systematic shift…
This paper reviews recent progress in the study of rare gas films on quasicrystalline surfaces. The adsorption of Xe on the 10-fold surface of decagonal Al-Ni-Co was studied using low-energy electron diffraction (LEED). The results of these…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
The microstructure, electronic structure, and chemical bonding of chromium carbide thin films with different carbon contents have been investigated with high-resolution transmission electron microscopy, electron energy loss spectroscopy and…
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam…
Previous Zernike phase-plates, for transmission-electron-microscopy (TEM) have always been made out of carbon. A critical constraint on those phase-plates is their fast degradation during use. Here, a Zernike phase-plate consisting out of…
We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and…
We use room temperature ion beam assisted sputtering (IBAS) to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures,…
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the…
The superconducting Transition-Edge Sensor (TES) is a critical technology for next-generation X-ray spectrometers, known for its exceptional energy resolution. In the last decade, TESs based on AlMn alloy films have been extensively used in…
We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of…
We investigate the growth conditions for thin (less than 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures…
Erbium doped materials are of great interest in optical telecommunications due to the Er3+ intra-4f emission at 1.54 ?m. Erbium doped fibre amplifiers (EDFA) were developed in silica glass because of the low losses at this wavelength and…
A few atomic layers of helium adsorbed on graphite have been attracting much attention as one of the ideal quantum systems in two dimension. Although previous reports on neutron diffraction have shown fundamental structural information in…
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…