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Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…

Materials Science · Physics 2015-05-13 Matthew S. Marcus , J. M. Simmons , O. M. Castellini , R. J. Hamers , M. A. Eriksson

The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…

Optics · Physics 2016-08-03 Zhaolin Lu , Peichuan Yin , Kaifeng Shi

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…

In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase,…

Chemical Physics · Physics 2015-06-11 X. Q. Wang , C. B. Cai , Y. F. Wang , W. Q. Zhou , Y. M. Lu , Z. Y. Liu

The electron flux diverts electrons from optimal hydrogen production pathways to competitive pathways, which overall reduces the efficiency of the photo fermentation hydrogen production (PFHP) system. For tackling electron flux and…

Biological Physics · Physics 2025-12-05 Muhammad Shahzaib

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

Mesoscale and Nanoscale Physics · Physics 2015-01-30 Wan Sik Hwang , Maja Remskar , Rusen Yan , Tom Kosel , Jong Kyung Park , Byung Jin Cho , Wilfried Haensch , Huili , Xing , Alan Seabaugh , Debdeep Jena

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and…

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

Materials Science · Physics 2007-12-18 Yu-Ming Lin , Joerg Appenzeller , Joachim Knoch , Phaedon Avouris

All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…

Materials Science · Physics 2025-10-02 B. Liu , X. Zhang , W. Hou , H. Feng , Zhengei Dai , Zhi-Xin Guo

Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the…

Hybrid organic/inorganic-semiconductor systems have important applications in both molecular electronics and in photo-responsive materials. The characterization of the interface and of the electronic excited-states of these hybrid systems…

Chemical Physics · Physics 2019-01-07 Daniel Escudero , Ivan Duchemin , Xavier Blase , Denis Jacquemin

An interesting interplay between two different modifiers and the surface of titanium dioxide leads to a significant change in photoelectrochemical properties of the designed hybrid materials. The semiconductor is photosensitized by one of…

Materials Science · Physics 2018-10-25 K. Pilarczyk , K. Lewandowska , K. Mech , M. Kawa , M. Gajewska , B. Barszcz , A. Bogucki , A. Podborska , K. Szaciłowski

Organic electrochemical transistors (OECTs) are key bioelectronic devices, with applications in neuromorphics, sensing, and flexible electronics. However, their microfabrication typically relies on precious metal contacts manufactured via…

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…

Mesoscale and Nanoscale Physics · Physics 2024-09-19 E. Icking , D. Emmerich , K. Watanabe , T. Taniguchi , B. Beschoten , M. C. Lemme , J. Knoch , C. Stampfer

Cell-based biosensors constitute a fundamental tool in biotechnology, and their relevance has greatly increased in recent years as a result of a surging demand for reduced animal testing and for high-throughput and cost-effective in vitro…

We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…

Mesoscale and Nanoscale Physics · Physics 2019-08-30 Giorgio De Simoni , Federico Paolucci , Claudio Puglia , Francesco Giazotto

The electronic transport and the sensing performance of an individual SnO2 crossed nanowires device in a three-terminal field effect configuration were investigated using a combination of macroscopic transport measurements and Scanning…

Materials Science · Physics 2009-11-11 S. V. Kalinin , J. Shin , S. Jesse , D. Geohegan , A. P. Baddorf , Y. Lilach , M. Moskovits , A. Kolmakov

The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…

Materials Science · Physics 2010-01-12 Qing Cao , Minggang Xia , Coskun Kocabas , Moonsub Shim , John A. Rogers , Slava V. Rotkin

Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET)…