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Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their performance is strongly limited by low-frequency noise (LFN). Here,…

Mesoscale and Nanoscale Physics · Physics 2017-04-04 Isidoro Martinez , Mario Ribeiro , Pablo Andres , Luis E. Hueso , Felix Casanova , Farkhad G. Aliev

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…

Materials Science · Physics 2025-12-03 Ziye Zhu , Xianzhang Chen , Xunkai Duan , Zhou Cui , Jiayong Zhang , Igor Zutic , Tong Zhou

The controlled covalent functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects leads to additional narrow and tunable photoluminescence features in the near-infrared and even enables…

Applied Physics · Physics 2021-08-29 Nicolas F. Zorn , Felix J. Berger , Jana Zaumseil

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…

Materials Science · Physics 2009-11-10 K. P. Pernstich , A. N. Rashid , S. Haas , G. Schitter , D. Oberhoff , C. Goldmann , D. J. Gundlach , B. Batlogg

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH$_3$NH$_3$PbI$_3$ nanowires (MAPbI$_3$NW). These devices represent light responsivities of R=7.7x10$^5$ A/W at low-lighting conditions…

Mesoscale and Nanoscale Physics · Physics 2016-12-07 M. Spina , B. Náfrádi , H. M. Tóháti , K. Kamarás , R. Gaal , L. Forró , E. Horváth

Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs…

The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that…

Semiconductor transistors are essential elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be highly…

Mesoscale and Nanoscale Physics · Physics 2023-03-01 Tatiana G. Rappoport , Tiago A. Morgado , Sylvain Lannebère , Mário G. Silveirinha

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…

Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs),…

Mesoscale and Nanoscale Physics · Physics 2015-09-15 Yannick Viero , Guillaume Copie , David Guerin , Christophe Krzeminski , Dominique Vuillaume , Stephane Lenfant , Fabrizio Cleri

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Muhammad R. Islam , Kristy J. Kormondy , Eliot Silbar , Saiful I. Khondaker

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

Mesoscale and Nanoscale Physics · Physics 2021-08-03 Farshid Raissi , Mina Amirmazlaghani , Ali Rajabi

In the past two decades another transistor based on conducting polymers, called the organic electrochemical transistor (ECT) was shown and largely studied. The main difference between organic ECTs and FETs is the mode and extent of channel…

Materials Science · Physics 2024-01-18 Jyoti Shakya , Min-A Kang , Jian Li , Armin VahidMohammadi , Weiqian Tian , Erica Zeglio , Mahiar Max Hamedi

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Sergii Pud , Jing Li , Volodymyr Sibiliev , Mykhaylo Petrychuk , Valery Kovalenko , Andreas Offenhäusser , Svetlana Vitusevich

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…

A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film…

Materials Science · Physics 2009-11-11 D. R. Hines , S. Mezhenny , M. Breban , E. D. Williams , V. W. Ballarotto , G. Esen , A. Southard , M. S. Fuhrer

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

Materials Science · Physics 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…

Mesoscale and Nanoscale Physics · Physics 2014-12-17 Chitrakant Sahu , Avinash Lahgere , Jawar Singh
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