Related papers: Silicon photodetector for integrated lithium nioba…
Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 ${\mu}$m. Multilayered platinum diselenide (PtSe$_2$) is a…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical…
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A…
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a…
The heterogeneous integration of lithium niobate photonic waveguide devices onto a silicon nitride waveguide platform via a transfer-printing approach has been demonstrated for the first time. A fabrication process was developed to make…
Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still…
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high…
Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…
A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective…
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in…
The application of silicon photomultiplier (SiPM) technology for weak-light detection at a single photon level has expanded thanks to its better photon detection efficiency in comparison to a conventional photomultiplier tube (PMT). SiPMs…
We demonstrate fast counting and multiphoton detection abilities of a Silicon Photo Multiplier (SiPM). In fast counting mode we are able to detect two consecutive photons separated by only 2.3 ns corresponding to 430 MHz. The counting…
Thin-film lithium niobate on insulator (LNOI) is a promising platform for optical communications, microwave photonics, and quantum technologies. While many high-performance devices like electro-optic modulators and frequency comb sources…
In this article we describe the photon detection readout electronics for the nEDM@SNS experiment. The chosen "photon counting" architecture, which utilizes high-efficiency silicon photomultipliers (SiPMs) and is appropriate for low-light…
Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the THz range, so-called T-waves. However, fabrication of the underlying high-speed photodiodes and photoconductors still…
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed…
The rapid development of quantum information processors has accelerated the demand for technologies that enable quantum networking. One promising approach uses mechanical resonators as an intermediary between microwave and optical fields.…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in…