Related papers: Silicon photodetector for integrated lithium nioba…
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices,…
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping,…
Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…
We demonstrated a Germanium-on-Silicon photodetector utilizing an asymmetric-Fabry-Perot resonator with 0.08 fF capacitance. The measurements at 1315.5 nm show 0.72 nA (3.40 nA) dark current, 0.93 A/W (0.96 A/W) responsivity, 36 Gb/s (38…
Lithium niobate on insulator emerges as a promising platform for integrated microwave photonics because of its capability of ultralow-loss guidance and high-efficiency modulation of light. Chip-level integration of microwave filters is…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…
Lithium Niobate (LN or just niobate) thin-film micro-photonic resonators have promising prospects in many applications including high efficiency electro-optic modulators, optomechanics and nonlinear optics. This paper presents free-standing…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…
The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity.…
Photonic topological insulators provide unidirectional, robust, wavelength-selective transport of light at an interface while keeping it insulated at the bulk of the material. The non-trivial topology results in an immunity to…
We present a lithium niobate multi-functional platform (LN-MFP) that integrates photoacoustic and thermoelastic spectroscopy with photodetection on a single chip. Utilizing LN's piezoelectric and thermoelastic properties and an optimized…
Optomechanical transduction harnesses the interaction between optical fields and mechanical motion to achieve sensitive measurement of weak mechanical quantities with inherently low noise. Lithium niobate combines low optical loss, strong…
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we…
Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus…
Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately,…