Related papers: Silicon photodetector for integrated lithium nioba…
We experimentally demonstrate a visible light thin-film lithium niobate modulator at 532 nm. The waveguides feature a propagation loss of 2.2 dB/mm while a grating for fiber interface has a coupling loss of 5 dB. Our demonstrated modulator…
Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating…
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm,…
In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…
We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a…
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here…
While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For…
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…
We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of…
Optical isolators are an essential component of photonic systems. Current integrated optical isolators have limited bandwidths due to stringent phase-matching conditions, resonant structures, or material absorption. Here, we demonstrate an…
Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still…
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency…
We show the proof-of-principle detection of light at 1550 nm coupled evanescently from a titanium in-diffused lithium niobate waveguide to a superconducting transition edge sensor. The coupling efficiency strongly depends on the…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
In this paper, a silicon rich nitride-lithium niobate on insulator (SRN-LNOI) hybrid platform with waveguides and several key components is proposed. The propagation loss of the silicon rich nitride-lithium niobate rib-loaded waveguide (1…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…
Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…
Millimeter-wave (mmWave,>30 GHz) radars are the key enabler in the coming 6G era for high-resolution sensing and detection of targets. Photonic radar provides an effective approach to overcome the limitations of electronic radars thanks to…