Related papers: Ar+-sputtered Ge (001) surface nanostructuring at …
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300{\deg}C). Their structural, chemical and optical…
A simple (2+1) dimensional discrete model is introduced to study the evolution of solid surface morphologies during ion-beam sputtering. The model is based on the same assumptions about the erosion process as the existing analytic theories.…
The electron scattering from periodic line defects on the surface of topological insulators with hexagonal warping effect is investigated theoretically by means of a transfer matrix method. The influence of surface line defects, acting as…
Low energy alkali ion scattering is used to investigate the deposition of Au onto a single layer of graphene grown onto Ni(111) by chemical vapor deposition. The yield of 3.0 keV Na$^+$ singly scattered from Au as a function of coverage…
The morphology of growing Pd nano-particles on MgO(001) surfaces have been investigated in situ, during growth, by grazing incidence small angle x-ray scattering, for different substrate temperatures. The 2D patterns obtained are…
We demonstrate that directional electromagnetic scattering can be realized from a artificial Mie resonant strcuture which supports electric and magnetic dipole modes simultaneously. The directivity of the far-field radiation pattern can be…
With analytical (generalized Mie scattering) and numerical (integral-equation-based) considerations we show the existence of strong resonances in the scattering response of small spheres with lossless impedance boundary. With increasing…
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of…
Atomic diffusion at nanometer length scale may differ significantly from bulk diffusion, and may sometimes even exhibit counterintuitive behavior. In the present work, taking Cu/Ni as a model system, a general phenomenon is reported which…
Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much…
Two-dimensional higher-order topological insulators can display a number of exotic phenomena such as half-integer charges localized at corners or disclination defects. In this paper, we analyze these phenomena, focusing on the paradigmatic…
Jet impingement enhances heat transfer and is characterised by the complex flow patterns formed when a jet impacts a plate aligned normal to it. While traditional round jet impingement has been extensively studied to understand flow and…
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the…
We report inelastic light scattering studies on Ca(Fe0.97Co0.03)2As2 in a wide spectral range of 120-5200 cm-1 from 5K to 300K, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at Tsm ~ 160K. The…
The influence of the space charge of ions emitted from the surface of a conical spike on its shape has been studied. The problem of the calculation of the spatial distributions of the electric field, ion velocity field, and the space charge…
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally…
We present theoretical study of morphology of Fe islands grown at Mo(110) surface in sub-monolayer MBE mode. We utilize atomistic SOS model with bond counting, and interactions of Fe adatom up to third nearest neighbors. We performed KMC…
A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…
Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi2Te3 topological…
200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C for 30 minutes in Ar ambience. Topographical studies of…