Related papers: Ar+-sputtered Ge (001) surface nanostructuring at …
In the continuum theory the time evolution of surfaces eroded by ion bombardment is modelled by stochastic partial differential equations (SPDEs). These determine the scaling regimes and universality classes of the evolving surfaces.…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i)…
We have observed the formation of ripples in a number of thin metal films, e.g. Au, Pt, Ag, Cu and Co under Ar^{+} ion beam sputtering at grazing incidence. The structures are found to be quite stable under ambient conditions. The results…
We have investigated morphology of the lateral surfaces of PbTe crystal samples grown from melt by the Bridgman method sputtered by Ar+ plasma with ion energy of 50-550 eV for 5-50 minutes under Secondary Neutral Mass Spectrometry (SNMS)…
Energetic particle irradiation of solids can cause surface ultra-smoothening, self-organized nanoscale pattern formation, or degradation of the structural integrity of nuclear reactor components. Periodic patterns including high-aspect…
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied…
The structure of a graphene monolayer on Ir(111) has been investigated {\it in situ} in the growth chamber by surface x-ray diffraction including the specular rod, which allows disentangling the effect of the sample roughness from that of…
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…
Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation beyond some critical angle of the beam versus the surface. It is known from experimental results that this critical angle varies…
We have measured the absolute doubly differential angular sputtering yield for 20 keV Kr+ impacting a polycrystalline Cu slab at an incidence angle of {\theta}i = 45{\deg} relative to the surface normal. Sputtered Cu atoms were captured…
We study the morphological evolution of surfaces during ion sputtering and we compare their dynamical roughening with aeolian ripple formation in sandy deserts. We show that, although the two phenomena are physically different, they must…
Nonlinear models for pattern evolution by ion beam sputtering on a material surface present an ongoing opportunity for new numerical simulations. A numerical analysis of the evolution of preexisting patterns is proposed to investigate…
We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional…
Hemispherical amorphous silicon nanoparticles exhibit asymmetric optical scattering for forward illumination (base-to-apex) and backward illumination (apex-to-base). There exists an anapole mode only for backward propagation, not for…
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for…
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of…
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the…
We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux…
Bi$_2$Te$_3$ is a topological insulator whose unique properties result from topological surface states in the band gap. The neutralization of scattered low energy Na$^+$, which is sensitive to dipoles that induce inhomogeneities in the…