Related papers: Ar+-sputtered Ge (001) surface nanostructuring at …
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries…
We investigate single Ge and Ag impurities buried below a Cu(100) surface using low temperature scanning tunneling microscopy. The interference patterns in the local density of states are surface scattering signatures of the bulk…
We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where…
Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of…
Al(110) has been studied for temperatures up to 900 K via ensemble density-functional molecular dynamics. The strong anharmonicity displayed by this surface results in a negative coefficient of thermal expansion, where the first interlayer…
The evolution of the nanoporous structure of cylindrical sintered silver samples during high temperature aging, ranging from 200 {\textdegree}C to 350 {\textdegree}C for 350 min, is studied through in-situ Computed X-Ray Tomography.…
Thermal energy atom scattering at a surface with grazing incidence conditions is an innovative method for investigating dispersive atom-surface interactions with potential application in quantum sensing interferometry. The complete…
We propose and study a continuum model for the dynamics of amorphizable surfaces undergoing ion-beam sputtering (IBS) at intermediate energies and oblique incidence. After considering the current limitations of more standard descriptions in…
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of…
Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers,…
On the proper timescale, amorphous solids can flow. Solid flow can be observed macroscopically in glaciers or lead pipes, but it can also be artificially enhanced by creating defects. Ion Beam Sputtering (IBS) is a technique in which ions…
Two-dimensional hexagonal arrays of Pt nanoparticles (1.45 nm diameter) have been obtained by deposition of preformed and size selected Pt80 nanoparticles on graphene. This original self-organization is induced, at room temperature, by the…
We demonstrate in both laboratory and numerical experiments that ion bombardment of a modestly sloped surface can create knife-edge like ridges with extremely high slopes. Small pre-fabricated pits expand under ion bombardment, and the…
Au nanoparticles, prepared by thermal evaporation under high vacuum condition on Si substrate, are irradiated with Au ions at different ion energies. During ion irradiation, embedding of nanoparticles as well as ejection of nano-clusters is…
In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies…
We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin flip…
Azimuthal angle (Delta phi) correlations are presented for a broad range of transverse momentum (0.4 < pT < 10 GeV/c) and centrality (0-92%) selections for charged hadrons from di-jets in Au+Au collisions at sqrt(s_NN) = 200 GeV. With…