Related papers: Ar+-sputtered Ge (001) surface nanostructuring at …
We analyze the strong hexagonal warping of the Dirac cone of Bi$_2$Te$_3$ by angle-resolved photoemission. Along $\overline{\Gamma}$$\overline{\rm M}$, the dispersion deviates from a linear behavior meaning that the Dirac cone is warped…
Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is…
The polarization- and angle- resolved optical response of the anapole mode in silicon nano-disks array have been experimentally and theoretically investigated. The good agreement betweenmeasured data and simulations yields to a consistent…
The impact of surface morphology on electronic structure of topological crystalline insulators is studied theoretically. As an example, the structure of topologically protected electronic states on a (001) (Pb,Sn)Se surface with terraces of…
Cylindrical interfaces occur in sheared or deformed emulsions and as biological or technological lipid monolayer or bilayer tubules. Like the corresponding spherical droplets and vesicles, these cylinder-like surfaces may host orientaional…
We describe a novel crystal growth instability that enhances the development of thin edges, promoting the formation of plate-like or hollow columnar morphologies. This instability arises when diffusion-limited growth is coupled with…
The crystallographic orientation of films grown on 2D-masked substrates is often used to infer the pathway among remote, van der Waals, and thru-hole (pinhole-seeded) epitaxy. However, attribution of a specific growth mechanism based on…
Rotational excitation of isotopologues of HCN and HNC by thermal electron-impact is studied using the molecular {\bf R}-matrix method combined with the adiabatic-nuclei-rotation (ANR) approximation. Rate coefficients are obtained for…
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4{\deg} vicinal sapphire substrates by metal…
We study the scattering resonances of one-dimensional deterministic aperiodic chains of electric dipoles using the vectorial Green's matrix method, which accounts for both short- and long-range electromagnetic interactions in open…
The concept of geometric phase was applied to initiate the geometric-phase portrayal of electromagnetic scattering by a three-dimensional object in free space. Whereas the incident electromagnetic field is that of an arbitrarily polarized…
We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…
All-dielectric nanophotonics opens a venue for a variety of novel phenomena and scattering regimes driven by unique optical effects in semiconductor and dielectric nanoresonators. Their peculiar optical signatures enabled by simultaneous…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…
We analyze spin scattering in ballistic transport of electrons through a ripple at a normal incidence of an electron flow. The model of a ripple consists of a curved graphene surface in the form of an arc of a circle connected from the…
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…
We present a computational study of the void-induced microstructure in amorphous silicon ($\it a$-Si) by generating ultra-large models of $\it a$-Si with a void-volume fraction of 0.3$\%$, as observed in small-angle x-ray scattering (SAXS)…
The existence of orbital-dependent electronic correlations has been recognized as an essential ingredient to describe the physics of iron-based superconductors. NaFeAs, a parent compound of iron based superconductors, exhibits a…
The damage growth and surface modifications in Si(100), induced by 25 keV Si$_5^-$ cluster ions, as a function of fluence, $\phi$, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry…