Related papers: Band bending profile and band offset extraction at…
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching…
A new model-based image adjustment for the enhancement of multi-resolution image fusion or pansharpening is proposed. Such image adjustment is needed for most pansharpening methods using panchromatic band and/or intensity image (calculated…
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…
Band alignment between solids is a crucial issue in condensed matter physics and electronic devices. Although the XPS method has been used as a routine method for determination of the band alignment, the theoretical calculations by copying…
Hyperspectral Imaging (HSI) captures rich spectral information across contiguous wavelength bands, supporting applications in precision agriculture, environmental monitoring, and autonomous driving. However, its high dimensionality poses…
Space group theory is pivotal in the design of nanophotonics devices, enabling the characterization of periodic optical structures such as photonic crystals. The aim of this study is to extend the application of nonsymmorphic space groups…
The past decades have witnessed marked progresses on the research of interfacial science in complex systems promoted by the advances in novel experimental techniques. Despite its success in many fields, implementation of coherent…
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band…
Band structure unfolding is a key technique for analyzing and simplifying the electronic band structure of large, internally distorted supercells that break the primitive cell's translational symmetry. In this work, we present an efficient…
Electronic correlations were long suggested not only to be responsible for the complexity of many novel materials, but also to form essential prerequisites for their intriguing properties. Electronic behavior of iron-based superconductors…
In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We…
Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional…
Millimeter-wave communication has the potential to deliver orders of magnitude increases in mobile data rates. A key design challenge is to enable rapid beam alignment with phased arrays. Traditional millimeter-wave systems require a high…
Band gap variations in thin film structures, across grain boundaries, and in embedded nanoparticles are of increasing interest in the materials science community. As many common experimental techniques for measuring band gaps do not have…
Multispectral imaging provides valuable information on tissue composition such as hemoglobin oxygen saturation. However, the real-time application of this technique in interventional medicine can be challenging due to the long acquisition…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral…
Side surfaces of cuprate superconductors are expected to display a suppressed $d$-wave order parameter and zero-energy topological flat bands with a large density of states, making them susceptible to symmetry broken orders. Yet such…
In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining…
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…