Atomically resolved electron reflectivity at a metal/semiconductor interface

Ding-Ming Huang; Jian-Huan Wang; Jie-Yin Zhang; Yuan Yao; H. Q. Xu; Jian-Jun Zhang

Atomically resolved electron reflectivity at a metal/semiconductor interface

Mesoscale and Nanoscale Physics 2025-10-10 v1 Materials Science

Authors: Ding-Ming Huang , Jian-Huan Wang , Jie-Yin Zhang , Yuan Yao , H. Q. Xu , Jian-Jun Zhang

Abstract

An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral periodic change of the electron reflectivity at the Al/Ge interface. The variation of electron reflectivity is up to 24% in lateral 2 nm. We speculate that the change of reflectivity results from the local electronic states at the Al/Ge interface. This phenomenon provides an atomically non-destructive method for detecting the buried interfacial states in hetero-structures by STM.

Keywords

oxide interfaces surface science crystal structure of iron alloys

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@article{arxiv.2510.07970,
  title  = {Atomically resolved electron reflectivity at a metal/semiconductor interface},
  author = {Ding-Ming Huang and Jian-Huan Wang and Jie-Yin Zhang and Yuan Yao and H. Q. Xu and Jian-Jun Zhang},
  journal= {arXiv preprint arXiv:2510.07970},
  year   = {2025}
}

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24 pages, 12 figures

Atomically resolved electron reflectivity at a metal/semiconductor interface

Abstract

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