Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Weiguang Ye; A. B. Pakhomov; Shuigang Xu; Huanhuan Lu; Zefei Wu; Yu Han; Tianyi Han; Yingying Wu; Gen Long; Jiangxiazi Lin; Gu Xu; Yuan Cai; Lu-Tao Weng; Ning Wang

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Mesoscale and Nanoscale Physics 2015-11-12 v1

Authors: Weiguang Ye , A. B. Pakhomov , Shuigang Xu , Huanhuan Lu , Zefei Wu , Yu Han , Tianyi Han , Yingying Wu , Gen Long , Jiangxiazi Lin , Gu Xu , Yuan Cai , Lu-Tao Weng , Ning Wang

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Abstract

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without capping. Most interestingly, UPS spectra suggest depletion or inversion in the originally n-type topological insulator near the interface. Strong band bending in the topological insulator requires careful material engineering or electric biasing if one desires to make use of the spin locking in surface states in the bulk gap for potential spintronic applications

Keywords

topological insulator Bi2Se3 transition metal interfaces band bending surface states spin locking spintronic applications material engineering

Cite

@article{arxiv.1511.03421,
  title  = {Band bending at interfaces between topological insulator Bi2Se3 and transition metals},
  author = {Weiguang Ye and A. B. Pakhomov and Shuigang Xu and Huanhuan Lu and Zefei Wu and Yu Han and Tianyi Han and Yingying Wu and Gen Long and Jiangxiazi Lin and Gu Xu and Yuan Cai and Lu-Tao Weng and Ning Wang},
  journal= {arXiv preprint arXiv:1511.03421},
  year   = {2015}
}

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8 pages, 5 figures

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Abstract

Keywords

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