Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

Matthew Brahlek; Namrata Bansal; Nikesh Koirala; Su-Yang Xu; Madhab Neupane; Chang Liu; M. Zahid Hasan; Seongshik Oh

doi:10.1103/PhysRevLett.109.186403

Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

Mesoscale and Nanoscale Physics 2012-11-02 v1 Materials Science Strongly Correlated Electrons

Authors: Matthew Brahlek , Namrata Bansal , Nikesh Koirala , Su-Yang Xu , Madhab Neupane , Chang Liu , M. Zahid Hasan , Seongshik Oh

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Abstract

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase transitions. At x = 3-7%, there is a transition from a topologically non-trivial metal to a trivial metal. At x = 15%, the metal becomes a variable-range-hopping insulator. Finally, above x = 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating/tunneling insulators.

Keywords

topological insulator band insulator quantum phase transition thin films transport measurements photoemission

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@article{arxiv.1209.2840,
  title  = {Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films},
  author = {Matthew Brahlek and Namrata Bansal and Nikesh Koirala and Su-Yang Xu and Madhab Neupane and Chang Liu and M. Zahid Hasan and Seongshik Oh},
  journal= {arXiv preprint arXiv:1209.2840},
  year   = {2012}
}

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15 pages, 3 figures

Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

Abstract

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