Related papers: Torus Breakdown in a Uni Junction Memristor
Using an analysis similar to that of Imry and Wortis, it is shown that the apparent first order superconductor to metal transition, which has been claimed to exist at low values of the magnetic field in a two-dimensional field-tuned system…
We theoretically investigate the tunneling-induced transparency (TIT) and the Autler-Townes (AT) doublet and triplet in a triple-quantum-dot system. For the resonant tunneling case, we show that the TIT induces a transparency dip in a…
We investigate the Fourier transform of the current through a memristor when the applied-voltage frequency is smaller than the characteristic memristor frequency, and the memristor shows hysteresis in the current-voltage plane. We find that…
Thermal activation and macroscopic quantum tunneling in current-biased discrete Josephson transmission lines are studied theoretically. The degrees of freedom under consideration are the phases across the junctions which are coupled to each…
The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects…
In 2008, it was widely announced that the missing memristor, a basic two-terminal electrical circuit element, had finally been discovered. The memristor is the fourth and last such circuit element and thus completes circuit theory.…
Dynamics of stacked intrinsic Josephson junctions (IJJ) in the high-Tc superconductors is theoretically investigated. We calculate the current-voltage characteristics (CVC) of IJJ and study the breakpoint region on the outermost branch of…
A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…
We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ as an example, we show that the product of the local…
Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G.…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellain in nature, while metal electrons obey the Fermi-Dirac distribution. In this…
Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density…
The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…