Related papers: Torus Breakdown in a Uni Junction Memristor
Recently, a thermodynamic uncertainty relation (TUR) has been formulated for classical Markovian systems demonstrating trade-off between precision (current fluctuation) and cost (dissipation). Systems that violate the TUR are interesting as…
Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…
We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…
We investigate the shift current in two-dimensional (2D) Janus transition-metal dichalcogenides (TMDs). The shift current is evaluated using a real-time approach, where the coupling with an external field is described in terms of a…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
The memristor is a device whose resistance changes depending on the polarity and magnitude of a voltage applied to the device's terminals. We design a minimalistic model of a regular network of memristors using structurally-dynamic cellular…
In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance…
The patterns of reversible changes in the critical current and discrete current states of a structure in the form of a superconducting quantum interferometer shunted by superconducting inductance, as a result of passing an alternating…
VI-curves of resistively shunted single Josephson junctions with different capacitances and tunneling resistances are found to display a crossover between two types of VI-curves: one without and another with a resistance bump (negative…
We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated…
Advances in fabrication and control of quantum dots allow the realization of metastructures that may exhibit novel electrical transport phenomena. Here, we investigate the electrical current passing through one such metastructure, a system…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
The symmetry properties of the order parameter characterize different phases of unconventional superconductors. In the case of the heavy-fermion superconductor UPt$_3$, a key question is whether its multiple superconducting phases preserve…
The modern power system is evolving with increasing penetration of power electronics introducing complicated electromagnetic phenomenon. Electromagnetic transient (EMT) simulation is essential to understand power system behavior under…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…