Related papers: Torus Breakdown in a Uni Junction Memristor
The stability of molecular junctions under transport is of the utmost importance for the field of molecular electronics. This question is often addressed within the paradigm of current-induced heating of nuclear degrees of freedom or…
We report the fabrication and properties of a polymeric memristor, i.e. an electronic element with memory of its previous history. We show how this element can be viewed as a functional analog of a synaptic junction and how it can be used…
Calculating the trace of the product of $m$ $n$-qubit density matrices (multivariate trace) is a crucial subroutine in quantum error mitigation and information measures estimation. We propose an unified multivariate trace estimation (UMT)…
A comparative study of the magnetic properties of shunted and unshunted two-dimensional Josephson junction arrays (2D-JJA) is presented. Using a single-plaquette approximation of the 2D-JJA model, we were able to successfully fit all our…
We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…
In recent times, neural networks have been gaining increasing importance in fields such as pattern recognition and computer vision. However, their usage entails significant energy and hardware costs, limiting the domains in which this…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
The superconductor-to-insulator quantum phase transition in resistively shunted Josephson junctions is investigated by means of path-integral Monte Carlo simulations. This numerical technique allows us to directly access the (previously…
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…
Routers, switches, and repeaters are essential components of modern information-processing systems. Similar devices will be needed in future superconducting quantum computers. In this work we investigate experimentally the time evolution of…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Sequential tunneling model is used to study electron transport in molecular rectifiers based on structures of donor-bridge-acceptor type. The device is made of two metallic electrodes connected by a molecule, which contains acceptor and…
The crossover from double-junction behavior to single-junction behavior of ultrasmall tunnel junctions is studied theoretically in a scanning-tunneling microscope setup. The independently variable tip temperature of the microscope is used…