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Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for several applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
We present the results of the operation of an array of avalanche photodiodes (APDs) for the readout of an electroluminescence detector. The detector contains 24 APDs with a pitch of 15 mm between them allowing energy and position…
Silicon pad sensors with novel functions of higher timing resolution (LGAD: Low Gain Avalanche Detector) and higher position resolution (PSD: Position Sensitive Detector) are studied for an application to Silicon-Tungsten electromagnetic…
Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and…
We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK.…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
We have fabricated planar amorphous Indium Oxide superconducting resonators ($T_c\sim2.8$ K) that are sensitive to frequency-selective radiation in the range of 7 to 10 GHz. Those values lay far below twice the superconducting gap that…
We characterized the front-end electronics used to process high-frequency signals from low-gain avalanche diodes (LGADs) at the Fermilab Test Beam Facility. LGADs are silicon detectors employed for charged particle tracking, offering…
In the search for exotic events involving displaced particles at HL-LHC, the triggering at the level-1 (L1) system will pose a significant challenge. This is particularly relevant in scenarios where low mass long-lived particles (LLPs) are…
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of…
The measurement of light characteristics at the single- and few photon level plays a key role in many quantum optics applications. Often photodetection is preceded with the transmission of quantum light over long distances in optical fibers…
ALICE has been specifically optimized to study heavy-ion collisions at the LHC, up to a charged particle density of 8000 per unit of rapidity in central heavy-ion collisions at $\sqrt{s_{NN}}$ = 5.5 TeV. The High Momentum Particle…
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a…
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2,…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage…
Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising…