Related papers: Non-localized states and high hole mobility in amo…
We introduce a theoretical framework for computing transport coefficients for complex materials. As a first example, we resolve long-standing inconsistencies between experiment and theory pertaining to the conductivity and Hall mobility for…
From density functional calculations, we show that localized states stemming from defects or topological disorder exhibit an anomalously large electron-phonon coupling. We provide a simple analysis to explain the observation and perform a…
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms…
The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light $d$- and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high…
Inspired by Holstein's work on small polaron hopping, the evolution equations of localized states and extended states in presence of atomic vibrations are derived for an amorphous semiconductor. The transition probabilities are obtained for…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…
We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low…
Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response.…
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the…
We report on results of nonequilibrium transport measurements made on thin films of germanium-telluride (Ge_xTe) at cryogenic temperatures. Owing to a rather large deviation from stoichiometry (app. 10% of Ge vacancies), these films exhibit…
Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements…
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…
Amorphous semiconductors are important channel semiconductors in thin film transistors (TFTs) which serve not only active-matrix displays, but also flexible electronics for Internet of Things (IoT) applications. Nevertheless, a great…
Appropriate symmetry breaking generates an anomalous Hall (AH) effect, even in antiferromagnetic (AFM) materials. Itinerant magnets with $d$ electrons are typical examples that show a significant response. By contrast, the process by which…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
We study the anomalous Hall Effect (AHE) of single-crystalline Co$_3$Sn$_{2-x}$In$_x$S$_2$ over a large range of indium concentration x from 0 to 1. Their magnetization reduces progressively with increasing x while their ground state…