Related papers: Non-localized states and high hole mobility in amo…
Multiple trapping and release (MTR) is a typical transport mechanism of electron carriers in amorphous and other disordered semiconductors where localized states are significant. Quantitative description of MTR, however, has been based on…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
Ferromagnetic (FM) semimetals Fe$_n$GeTe$_2$(n=3, 4, 5), exhibit several symmetry-protected band-crossing points or lines near the Fermi energy (E$_F$) and these topological properties of energy bands lead to interesting transport…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane…
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum…
We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport…
W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…
Low-dimensional germanium hole devices are promising systems with many potential applications such as hole spin qubits, Andreev spin qubits, and Josephson junctions, and can serve as a basis for the realization of topological…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the…
The localized states in the band gap of amorphous phase change alloys like Ge$_2$Sb$_2$Te$_5$ control the electrical conduction via the Poole-Frenkel mechanism. Understanding the origin of in-gap states and their evolution in time during…
We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field,…
Bi$_2$O$_2$Se is an emerging high-performance layered semiconductor with excellent stability. While experimental studies have explored carrier transport across various doping levels for both $n$-type and $p$-type conduction, a comprehensive…
This paper reports conduction mechanism in a-\sbse over a wide range of temperature (238K to 338K) and frequency (5Hz to 100kHz). The d.c. conductivity measured as a function of temperature shows semiconducting behaviour with activation…
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we…
Me$_{3+\delta}$Ge, being a Weyl semimetal, shows a large anomalous Hall effect (AHE), which decreases slowly with an increase in $\delta$ from 0.1 to 0.4. However, AHE in this compound remains significantly large in the whole range of…