Related papers: Gating effects in antiferromagnetic CuMnAs
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
Nonsymmorphic crystals can host characteristic double surface Dirac cones with fourfold degeneracy on the Dirac points, called wallpaper fermion, protected by wallpaper group symmetry. We clarify the charge and spin Hall effect of wallpaper…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic…
Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a…
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs…
For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated…
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Altermagnetism (AM) and its associated spin-transport phenomena are typically linked to spin-split electronic band structures in bulk materials. However, the crystal surface has a reduced symmetry with respect to the bulk, which can induce…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
Extending the notion of symmetry protected topological phases to insulating antiferromagnets (AFs) described in terms of opposite magnetic dipole moments associated with the magnetic N$\acute{{\rm{e}}} $el order, we establish a bosonic…
Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in…