Related papers: Gating effects in antiferromagnetic CuMnAs
We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of…
Antiferromagnet materials have recently gained renewed interest due to their possible use in spintronics technologies, where spin transport is the foundation of their functionalities. In that respect metallic antiferromagnets are of…
Chiral molecular systems offer unique pathways to control spin and magnetism beyond conventional symmetry operations. Here, we demonstrate that chiral ionic liquids enable electric-field modulation of two-dimensional (2D) ferromagnetism in…
Detecting the orientation of the N\'eel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to…
We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in…
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped…
The energy of exchange coupled antiferromagnetic insulators (AFMIs) is a periodic function of the relative in-plane orientation of the N\'{e}el vector fields. We show that this leads to oscillations in the relative magnetization of exchange…
Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to…
We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times10^6$~A/cm$^2$,…
We explore proximity effects on transition metal dichalcogenide ribbons deposited on antiferromagnetic (AFM) insulating substrates. We model these hybrid heterostructures using a tight-binding model that incorporates exchange and Rashba…
The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the…
Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible…
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl…
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching…
Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another…
Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…