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The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device…
Van der Waals (vdW) superconductors - atomically thin crystalline materials that can be stacked into more complex heterostructures - have opened a promising avenue for superconducting electronics thanks to their properties that are…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a…
Graphene Field-Effect Transistors (GFETs) are increasingly employed as biochemical sensors due to their exceptional electronic properties, surface sensitivity, and potential for miniaturization. A critical challenge in deploying GFETs is…
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $\beta$-TeO$_2$ and the high on/off ratio and…
Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied…
Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of…
Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and…
This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…
Electrochemical gating has been demonstrated as a powerful tool to tune the physical properties of two-dimensional (2D) materials, leading to lots of fascinating quantum phenomena. However, the reported liquid-nature electrolytes (e.g,…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…
The contact resistance limits the down-scaling and operating range of OFETs. With the monolayer (1L) organic crystals and non-destructive metal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1 and Ohmic contact resistance of…
Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…
Battery interfaces critically influence lithium-metal battery performance through their role in ion diffusion and dendrite formation. However, structural characterization of these interfaces has remained challenging due to limitations in…
We study one-dimensional transport in focused-ion-beam written in-plane-gate transistors on III-V heterostructures at moderately low temperatures at zero bias without any external magnetic field applied. In accordance with a recent proposal…