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We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 Neal E. Staley , Nirat Ray , Marc A. Kastner , Micah P. Hanson , Arthur C. Gossard

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different…

Chemical Physics · Physics 2016-05-27 Irina Petreska , Vladimir Ohanesjan , Ljupco Pejov , Ljupco Kocarev

The Solid-Electrolyte Interphase, SEI, formed on a battery electrode has been a central area of research for decades. This thin, complex layer profoundly impacts the electrochemical deposition morphology and stability of the metal in…

Materials Science · Physics 2025-03-19 Stephen T. Fuller , J. -X. Kent Zheng

Mixed ionic-electronic conductors host tightly coupled interactions among mobile ions, electronic charges, and the polymer matrix, giving rise to complex multimodal responses spanning electrical, mechanical, and morphological…

A numerical and systematic parameter study of three-dimensional vesicle electrohydrodynamics is presented to investigate the effects of different fluid and membrane properties. The dynamics of vesicles in the presence of DC electric fields…

Soft Condensed Matter · Physics 2016-05-24 Ebrahim M. Kolahdouz , David Salac

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Chi-Shuen Lee , Eric Pop , Aaron D. Franklin , Wilfried Haensch , H. -S. Philip Wong

Polarized topological vertical cavity surface-emitting lasers (VCSELs), as stable and efficient on-chip light sources, play an important role in the next generation of optical storage and optical communications. However, most current…

Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO2-based active…

We report optically as well as electronically controlled, bio-electronic field-effect transistor (FET) based on the hybrid film of a photo-active purple membrane and electronically conducting single-walled carbon nanotubes (SWNTs). Two…

Applied Physics · Physics 2024-09-05 Vikram Bakaraju , Senthil Prasad , Brijesh Meena , Harsh Chaturvedi

We present a quantitative analysis of the steady state electronic transport in a resistive switching device. The device is composed of a thin film of Ag$_{2}$S (solid electrolyte) contacted by a Pt nano-contact acting as ion-blocking…

Materials Science · Physics 2017-12-11 Monica Morales-Masis , Hans-Dieter Wiemhofer , Jan M. van Ruitenbeek

Thermoresponsive hydrogels exhibit reversible deswelling at the Volume Phase Transition (VPT), associated to a minimum of the Poisson's ratio $\nu$. Recent numerical investigations uncovered the occurrence of a Hyper-Auxetic Transition…

Soft Condensed Matter · Physics 2024-07-31 Andrea Ninarello , Emanuela Zaccarelli

Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…

Mesoscale and Nanoscale Physics · Physics 2021-09-13 Md. S. Hossain , M. K. Ma , K. A. Villegas Rosales , Y. J. Chung , L. N. Pfeiffer , K. W. West , K. W. Baldwin , M. Shayegan

The structural, electronic, and magnetic properties of VSSe, VSeTe, VSTe monolayers in both 2H and 1T phases are investigated via first-principles calculations. The 2H phase is energetically favorable in VSSe and VSeTe, whereas the 1T phase…

Materials Science · Physics 2020-10-30 Dibyendu Dey , Antia S. Botana

The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…

Strongly Correlated Electrons · Physics 2018-02-28 T. J. Huffman , D. J. Lahneman , S. L. Wang , T. Slusar , Bong-Jun Kim , Hyun-Tak Kim , M. M. Qazilbash

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…

Mesoscale and Nanoscale Physics · Physics 2017-06-01 Yuan Huang , Eli Sutter , Peter Sutter

In recent years, vanadium oxides have gained immense attention in the field of energy storage devices due to their low-cost, layered structure and multi-valency despite their limited electrical conductivity and lower structural stability.…

Applied Physics · Physics 2020-09-28 Raktima Basu , Sandip Dhara

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…

We present a Density Functional Theory (DFT) study of the structural and electronic properties of bare rutile VO$_{2}$(110) surfaces and its oxygen-rich terminations. We discuss the performance of various DFT functionals, including PBE,…

Materials Science · Physics 2021-08-31 Jakub Planer , Florian Mittendorfer , Josef Redinger

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 J. Wan , M. Cahay , S. Bandyopadhyay