Related papers: Modeling Interface Charge Traps in Junctionless FE…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation is carried out by time-dependent DFT (TDDFT) simulation in…
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…
The junction temperature is a very important parameter for monitoring power electronics converters based on MOSFET transistors. They offer the possibility of switching at relatively higher frequencies than other transistors like IGTBTs.…
The existed theories and methods for calculating interfacial thermal conductance of solid-solid interface lead to diverse values that deviate from experimental measurements. In this letter, We propose a model to estimate the ITC at high…
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction…
We theoretically study finite temperature properties of interacting fermion systems under geometrical frustration in the charge degree of freedom. Physical quantities such as charge structure factors, the specific heat, and the entropy, of…
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…
A coupled cohesive zone model based on an analogy between fracture and contact mechanics is proposed to investigate debonding phenomena at imperfect interfaces due to thermomechanical loading and thermal fields in bodies with cohesive…
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…
The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
The influence of charge trap states in the dielectric boundary material on capacitively coupled radio frequency plasma discharge is investigated with theory and Particle in cell/Monte Carlo Collision simulation. It is found that the trap…
The interface between graphene and the ferroelectric superlattice $\mathrm{PbTiO_3/SrTiO_3}$ (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adsorbates at the graphene-ferroelectric…
We determine the interface tension for the 100, 110 and 111 interface of the simple cubic Ising model with nearest-neighbour interaction using novel simulation methods. To overcome the droplet/strip transition and the droplet nucleation…
The rapid development of modern energy applications drives an urgent need to enhance the dielectric strength of energy storage dielectrics for higher power density. Interface design is a promising strategy to regulate the crucial charge…
The temperature dependence of the integrated optical conductivity I(T) reflects the changes of the kinetic energy as spin and charge correlations develop. It provides a unique way to explore experimentally the kinetic properties of strongly…
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT).…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
Crack-templated networks, metallic frameworks fabricated from crack patterns in sacrificial thin films, can exhibit high optical transmittance, high electric conductivity, and a host of other properties attractive for applications. Despite…