Related papers: Modeling Interface Charge Traps in Junctionless FE…
Thermal properties of a two-layered composite conductor are modified in case the interface is damaged. The present paper deals with nondestructive evaluation of perturbations of interface thermal conductance due to the presence of defects.…
We consider the equilibrium statistical properties of interfaces submitted to competing interactions; a long-range repulsive Coulomb interaction inherent to the charged interface and a short-range, anisotropic, attractive one due to either…
We explore charge imbalance in mesoscopic normal-metal/superconductor multiterminal structures at very low temperatures. The investigated samples, fabricated by e-beam lithography and shadow evaporation, consist of a superconducting…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the…
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
Integrity and reliability of a national power grid system are essential to society's development and security. Among the power grid components, transmission lines are critical due to exposure and vulnerability to severe external conditions,…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between $\sim$0.6 and 1.5 MHz and $\sim$4 and 295 K. Additionally, we examine the possible effect of adsorbed surface…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
The current understanding of charge transfer dynamics in Charge-Coupled Devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the inter-phase…
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…
We study the effect of random offset charges in the insulator to conductor transition in systems of capacitively coupled grains, as realized in two-dimensional arrays of ultrasmall Josephson junctions. In presence of disorder, the…
Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of…
We develop a simple model to compute the energy-dependent decay factors of metal-induced gap states in metal/insulator interfaces considering the collective behaviour of all the bulk complex bands in the gap of the insulator. The agreement…
In many of the high-precision optical frequency standards with trapped atoms or ions that are under development to date, the AC Stark shift induced by thermal radiation leads to a major contribution to the systematic uncertainty. We present…
Charge trapping in germanium detectors will inevitably impact their excellent spectral performance. Disordered regions in the germanium crystal structure, either created in the material during processing or induced by radiation exposure,…
A novel phenomenological framework for an efficient estimation of the thermo-electric properties at room temperature and elevated temperatures of body-centered cubic (BCC) transition metal concentrated alloys is proposed in this work. The…