Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-k capacitors and BTI/RTN modeling at cryogenic temperatures.
@article{arxiv.2212.11547,
title = {Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices},
author = {Dominic Waldhoer and Christian Schleich and Jakob Michl and Alexander Grill and Dieter Claes and Alexander Karl and Theresia Knobloch and Gerhard Rzepa and Jacopo Franco and Ben Kaczer and Michael Waltl and Tibor Grasser},
journal= {arXiv preprint arXiv:2212.11547},
year = {2023}
}