Related papers: Comphy v3.0 -- A Compact-Physics Framework for Mod…
As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI)…
Current noise in electronic devices usually arises from uncorrelated charging events, with individual transitions resolved only at low temperatures. However, in 1-D nanotube-based transistors, we have observed random telegraph signal (RTS)…
The Calibration enhancement effort for the Space Telescope Imaging Spectrograph (STIS) aims to improve data calibration via the application of physical modelling techniques. We describe here a model of the Charge Transfer process during…
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. Interface charge traps arising from the exposure to chemicals,…
The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influence of defects on charge capture and recombination processes…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation is carried out by time-dependent DFT (TDDFT) simulation in…
Transmons are widely adopted in quantum computing architectures for their engineered insensitivity to charge noise and correspondingly long relaxation times. Despite this advantage, transmons often exhibit large fluctuations in dephasing…
The interface between graphene and the ferroelectric superlattice $\mathrm{PbTiO_3/SrTiO_3}$ (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adsorbates at the graphene-ferroelectric…
With the help of a tight-binding (TB) electronic-structure toy model we investigate the matching of parameters across hetero-interfaces . We demonstrate that the virtual crystal approximation, commonly employed for this purpose, may not…
We present a simple one-dimensional trapping model prompted by the problem of ion current across biological membranes. The trap is modeled mimicking the ionic channel membrane behaviour. Such voltage-sensitive channels are open or closed…
We introduce a model for rectification in three-terminal ballistic conductors, where the central connecting node is modeled as a chaotic cavity. For bias voltages comparable to the Fermi energy, a strong nonlinearity is created by the…
Kinetic traps are a notorious problem in equilibrium statistical mechanics, where temperature quenches ultimately fail to bring the system to low energy configurations. Using multifarious self-assembly as a model system, we introduce a…
We discuss the computational efficiency of the finite temperature simulation with the minimally entangled typical thermal states (METTS). To argue that METTS can be efficiently represented as matrix product states, we present an analytic…
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…
We have developed and applied a mobility edge model that takes into account drift and diffusion currents to characterize the space charge limited current in organic semiconductors. The numerical solution of the drift-diffusion equation…
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO$_2$/4H-SiC system over the whole 4H-SiC band gap. The temperature dependent instability of the threshold voltage in…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…