Related papers: Low-frequency charge noise in Si/SiGe quantum dots
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the…
We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a…
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the…
Spin-spin exchange interactions between semiconductor spin qubits allow for fast single and two-qubit gates. During exchange, coupling of the qubits to a surrounding phonon bath may cause errors in the resulting gate. Here, the fidelities…
Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…
Solid-state qubits are sensitive to their microscopic environment, causing the qubit properties to fluctuate on a wide range of timescales. The sub-Hz end of the spectrum is usually dealt with by repeated background calibrations, which…
Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
In Si/SiGe quantum dots, the decoherence behavior of spin qubits usually comes from the non-Markovian effect of the charge noise. To improve the performance of using the coherent noise models in the decoherence simulation and tomography…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…
Semiconductor spin qubits are an attractive platform for quantum computing, but their performance is degraded primarily by fluctuating electromagnetic environments. We introduce the concept of ballast charges, which are induced charges on…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
We investigate the time-evolution of a charge qubit subject to quantum telegraph noise produced by a single electronic defect level. We obtain results for the time-evolution of the coherence that are strikingly different from the usual case…
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the…