Related papers: Low-frequency charge noise in Si/SiGe quantum dots
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit…
Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…
Charge noise in semiconducting quantum dots has been observed to have a 1/f spectrum. We propose a model in which a pair of quantum dots are coupled to a 2D bath of fluctuating two level systems (TLS) that have electric dipole moments and…
Charge noise is an important factor limiting qubit coherence and relaxation in solid-state devices. In bilayer graphene (BLG) quantum dots, recently established as a promising platform for spin- and valley-based qubits, both the origin and…
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components…
To encode quantum information in semiconductor spin qubits, voltage pulses are necessary for initialization, gate operation, and readout. However, these pulses dissipate heat, shifting spin-qubit frequencies and reducing gate fidelities.…
The spin noise in singly charged self-assembled quantum dots is studied theoretically and experimentally under the influence of a perturbation, provided by additional photoexcited charge carriers. The theoretical description takes into…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we…
Quantum dot-based quantum computation employs extensively the exchange interaction between nearby electronic spins in order to manipulate and couple different qubits. The exchange interaction, however, couples the qubit states to charge…
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive to various forms of environmental noise. Conventional…
When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this "sub-bath" around the mean temperature defined by the larger bath can become…
The noise spectra associated with correlations of the current through a single level quantum dot, and with the charge fluctuations on the dot, are calculated for a finite bias voltage. The results turn out to be sensitive to the asymmetry…
In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge…
The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in…
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control.…
We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^\alpha$ over 5 decades with $\alpha = 1.93$ and a magnitude…