Related papers: Low-frequency charge noise in Si/SiGe quantum dots
Unexpected fluctuating charge field near a semiconductor quantum dot has severely limited the coherence time of the localized spin qubit. It is the interplay between the spin-orbit coupling and the asymmetrical confining potential in a…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
We study the noise spectra of a many-level quantum dot coupled to two electron reservoirs, when interactions are taken into account only on the dot within the Hartree-Fock approximation. The dependence of the noise spectra on the…
We analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We theoretically study the influence of charge noise on a controlled phase gate, implemented using two proximal double quantum dots coupled electrostatically. Using the configuration interaction method, we present a full description of the…
We study the decoherence effect of charge noise on a single flip-flop qubit and two dipole-coupled qubits. We find that a single flip-flop qubit is highly resistant to charge noise at its sweet spots. However, due to the proximity of the…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large scale quantum computer implementations. Noise coupled from the environment is the main contributing factor to…
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…
We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to…
The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum…
The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…
We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
Based on the scattering matrix theory and non-equilibrium green function method, we have investigated the fluctuations of charge and spin current of the systems which consists of a quantum dot (QD) with a resonant level coupled to two…
To verify the hypothesis about the common origin of the low frequency 1/f noise and the quantum f noise recently measured in the Josephson charge qubits, we study temperature dependence of the 1/f noise and decay of coherent oscillations.…