Related papers: Impurity concentration dependent electrical conduc…
Internal charge amplification (ICA) in cryogenic high-purity germanium (HPGe) can lower detection thresholds by providing gain inside the detector crystal, but reliable operation requires a predictive estimate of the avalanche-onset…
In these torsional oscillator experiments the samples of solid $^4$He were characterized by measuring their thermal conducitvity. Polycrystalline samples of helium of either high isotopic purity or natural concentration of $^3$He were grown…
We have successfully grown the single crystal of a low carrier density system Y$_3$Ru$_4$Ge$_{13}$ which crystallizes in the cubic crystal structure with the space group Pm3n. Y$_3$Ru$_4$Ge$_{13}$ exhibits super conductivity below 2.85 K as…
Heterodyne polarometry is used to measure the frequency dependence in the mid IR from 900 to 1100 cm$^-1$ and temperature dependence from 35 to 330 K of the normal state Hall transport in single crystal, optimally doped…
The possible presence of amorphous and heterogeneous phases in the inner crust of a neutron star is expected to reduce the electrical conductivity of the crust, with potentially important consequences on the magneto-thermal evolution of the…
On the Lifshitz black brane geometry of an Einstein-Maxwell-dilaton gravity, we holographically investigate electric DC conductivities and the role of impurity in a non-relativistic Lifshitz medium with two different charge carriers,…
Single crystals of (Eu$_{1-x}$Ba$_x$)O have been grown in a molten barium-magnesium metal flux at temperatures up to 1000{\deg}C, producing single crystals of (Eu$_{1-x}$Ba$_x$)O with barium doping levels ranging from $x=0.03$ to $x=0.25$.…
The compound $Nb_{5-\delta}Te_4$ ($\delta=0.23$) with quasi-one-dimensional crystal structure undergoes a transition to superconductivity at $T_c$=0.6--0.9 K. Its electronic transport properties in the normal state are studied in the…
Na-ion conduction, and correlations between Na-ion conduction pathways and crystal structure have been investigated as a function of temperature in the layered battery material Na2Ni2TeO6 by impedance spectroscopy and neutron diffraction,…
By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two…
This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota (USD). By subjecting the detector to cryogenic temperatures and an…
The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room…
Structural, electrical and magnetic measurements of 115 single crystals of PrIn$_5$ are reported. It has a tetragonal structure and has slightly lower cell volume than its isomorphic counter part CeCoIn_5. The resistivity saturates for…
The intrinsic d.c. electrical resistivity ($\rho$) - measurable on single crystals only - is often the quantity first revealing the properties of a given material. In the case of CH$_3$NH$_3$PbI$_3$ perovskite measuring $\rho$ under white…
We report the single crystal growth and characterization of EuIn$_2$, a magnetic topological semimetal candidate according to our density functional theory (DFT) calculations. We present results from electrical resistance, magnetization,…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
Millimeter sized single crystals of Mo3Sb7 are grown using the self-flux technique and a thorough characterization of their structural, magnetic, thermal and transport properties is reported. The structure parameters for the…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…
A high-quality single crystal of Ce3Pt23Si11 has been grown using the Czochralski method. The crystal structure is presented and the chemical composition has been checked using an electron microprobe analyzer. Measurements of the electrical…
A novel, to the best of our knowledge, ultralow-temperature luminescence thermometry strategy is proposed, based on a measurement of relative intensities of hyperfine components in the spectra of Ho$^{3+}$ ions doped into a crystal. A…