Related papers: Impurity concentration dependent electrical conduc…
We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1...4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for…
The bulk single crystals of $S = 1$ chain compound Ni(C$_3$H$_{10}$N$_2$)$_2$NO$_2$ClO$_4$ are grown by using a slow evaporation method at a constant temperature and a slow cooling method. It is found that the optimum condition of growing…
Single crystals of Cu$_{13}$Ba were successfully grown out of Ba-Cu self flux. Temperature dependent magnetization, $M(T)$, electrical resistivity, $\rho(T)$, and specific heat, $C_p(T)$, data are reported. Isothermal magnetization…
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors remains a challenge in the case of well controlled homogeneous alloys, several systems characterized by a strongly inhomogeneous…
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however…
The phenomenally large enhancement in conductivity observed when Li-doped MgO crystals are oxidized at elevated temperatures was investigated by dc and ac electrical measurements in the temperature interval 250-673 K. The concentration of…
Single crystals of NbGe$_{2}$ which crystallize in a noncentrosymmetric hexagonal structure with chirality are synthesized and their superconductivity is investigated. Type-I superconductivity is confirmed by dc magnetization, field-induced…
In this paper we report an extensive neutron diffraction investigation at high temperature on the BaCe0.80Y0.20O2.9 proton conducting material. Our results precisely define the structural evolution of the compound as a function of…
Iron-chalcogenide single crystals with the nominal composition FeSe$_{0.5}$Te$_{0.5}$ and a transition temperature of $T_{c}\simeq14.6$ K were synthesized by the Bridgman method. The structural and anisotropic superconducting properties of…
We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…
The crystal structure of barium-germanium clathrate Ba6Ge25 was studied using neutron powder diffraction in the temperature range 20-300K. The compound was found to be cubic (S.G. P4_1 23) in the entire temperature range. However, the…
Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium…
Single crystals of EuPd2Sb2 have been grown from PdSb self-flux. The properties of the single crystals have been investigated by x-ray diffraction, magnetic susceptibility chi, magnetization M, electrical resistivity rho, Hall coefficient…
We grew (Hg,Re)Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ ((Hg,Re)1223) single crystals with good reproducibility via the single-step flux method using monoxides as raw materials. A double-sealing method using a thick-walled quartz tube and a…
High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping…
We report on the single crystal growth of Eu(Pd$_{1-x}$Au$_x$)$_2$Si$_2$, $0< x\leq 0.2$, from a levitating Eu-rich melt using the Czochralski method. Our structural analysis of the samples confirms the ThCr$_2$Si$_2$-type structure as well…
The thermal conductivity of Zn-doped YBCO crystals was studied at low temperature (0.15 < T < 0.8 K) for different concentrations of Zn impurities. A small amount of Zn induces a dramatic decrease in the non-linear component of the…
Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of…